Internal Voltage Generation Circuit

ABSTRACT

An internal voltage generation circuit includes a first enable signal generator configured to delay an active signal to generate a first enable signal, a comparison signal generator configured to compare the internal voltage with an internal reference voltage to generate a comparison signal, a pulse signal generator configured to receive the first enable signal and to generate a pulse signal, a transmission device configured to buffer and transfer the comparison signal as a pull-down signal, and a drive device configured to drive the driving signal to the first level in response to the pull-down signal.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/583,961, filed Aug. 28, 2009, claiming priority of Korean PatentApplication No. 10-2009-0026045, filed Mar. 26, 2009.

TECHNICAL FIELD

This disclosure relates to an internal voltage generation circuit.

BACKGROUND

Semiconductor memories generally employ internal voltages for conductingtheir internal operations, based on power voltages (VDD) and groundvoltages (VSS) supplied thereto from external systems. There are varioustypes of voltages necessary for internal operations of the semiconductormemories, such as core voltage (Vcore) supplied into a memory coreregion, high voltage or pumping voltage (VPP) used in driving orover-driving word lines, back-bias voltage provided for a bulk regionfor NMOS transistors of the core region, and peripheral voltage (VPERI;hereinafter referred to as “peri-voltage”) supplied into a peripheralregion where control circuits of the semiconductor memories aredisposed.

Meanwhile, semiconductor memories are normally configured to reduce arate of power dissipation by generating and utilizing internal voltagesthat are lowered in standby modes, in which commands are waiting to beconducted, than in active modes in which reading and writing operationsare carried out. For example, the peri-voltage is designed to be at atarget level of 1.8V in the active mode, and to be at 1.2V in thestandby mode so as to reduce power consumption.

FIG. 1 is a block diagram of a conventional peri-voltage generationcircuit.

As shown in FIG. 1, the general peri-voltage generation circuit isformed of an active internal voltage generator 10 supplying 1.8V as atarget level of the peri-voltage VPERI for the active mode, and astandby internal voltage generator 12 supplying 1.2V as a target levelof the peri-voltage VPERI for the standby mode. For the purpose ofproviding the pen-voltage to the target levels, the active and standbyinternal voltage generators, 10 and 12, are formed of comparators (notshown) each receiving reference voltages of predetermined levels anddriving the peri-voltage to the target levels.

The conventional peri-voltage generation circuit with such aconfiguration operates as follows.

First, in the standby mode, the standby internal voltage generator 12generates the peri-voltage VPERI to the target level 1.2V in response toan active signal ACT that is disabled. Then, the active signal ACTenabled by an active command stops driving the standby internal voltagegenerator 12, and begins driving the active internal voltage generator10 to raise the peri-voltage VPERI up to 1.8V, which is the target levelof the active mode, from 1.2V of the standby mode.

However, as the peri-voltage VPERI is driven by the comparator (notshown) of the active internal voltage generator 10 while turning anoperation mode from the standby mode to the active mode, it takes muchtime to raise the peri-voltage VPERI up to the active mode target level1.8V from 1.2V. Further, while the peri-voltage VPERI is driven to thetarget level, leakage current could flow through the standby internalvoltage generator 12 that has been shut off in operation, causing powerdissipation.

SUMMARY

In an embodiment of this disclosure, an internal voltage generationcircuit includes a first enable signal generator configured to delay anactive signal for a predetermined delay time and to generate a firstenable signal, a comparison signal generator configured to compare theinternal voltage with an internal reference voltage, in response to anactive signal, and to generate a comparison signal, a pulse signalgenerator configured to receive the first enable signal and to generatea pulse signal, a transmission device configured to buffer and transferthe comparison signal as a pull-down signal in response to the pulsesignal, and a drive device configured to drive the driving signal to thefirst level in response to the pull-down signal.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and advantages will be moreclearly understood from the following detailed description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a block diagram of a conventional peri-voltage generationcircuit;

FIG. 2 is a block diagram illustrating a configuration of a peri-voltagegeneration circuit according to an embodiment of this disclosure;

FIG. 3 is a circuit diagram of an enable signal generator included inthe peri-voltage generation circuit shown in FIG. 2;

FIG. 4 is a timing diagram of enable signals supplied from the enablesignal generator shown in FIG. 3;

FIG. 5 is a block diagram of a first internal voltage generator includedin the peri-voltage generation circuit shown in FIG. 2;

FIG. 6 is a circuit diagram of an initial driver included in the firstinternal voltage generator shown in FIG. 5;

FIG. 7 is a circuit diagram of an initial driving terminator included inthe first internal voltage generator shown in FIG. 5;

FIG. 8 is a circuit diagram of a driving signal generator included inthe first internal voltage generator shown in FIG. 5; and

FIG. 9 is a circuit diagram of a second internal voltage generatorincluded in the peri-voltage generation circuit shown in FIG. 2.

DESCRIPTION OF PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described withreference to accompanying drawings. However, the embodiments are forillustrative purposes only and are not intended to limit the scope ofthe invention.

FIG. 2 is a block diagram illustrating a configuration of a peri-voltagegeneration circuit according to an embodiment of the present invention.

Referring to FIG. 2, the per-voltage generation circuit according tothis embodiment is comprised of an enable signal generator 2, a firstinternal voltage generator 3, and a second internal voltage generator 4.The enable signal generator 2, as illustrated in FIG. 3, includes afirst enable signal generator 20, a second enable signal generator 21, athird enable signal generator 22, and a fourth enable signal generator23.

The first enable signal generator 20 is composed of a plurality ofinverters to delay a delayed active signal ACTd for a predeterminedperiod of time and generate a first enable signal EN1. The delayedactive signal ACTd results from delaying an active signal ACT, which isenabled at a high level when an active mode begins, for a predetermineddelay time.

The second enable signal generator 21 includes a first delay unit 210and generates a second enable signal EN2 that is activated at a lowlevel after a delay period of the first delay unit 210 since the firstenable signal EN1 has been activated at a high level.

The third enable signal generator 22 is comprised of a first pulsegenerator 221 including a second delay unit 220, and a second pulsegenerator 223 including a third delay unit 222. The first pulsegenerator 221 outputs a signal, which is enabled at a high level, to anode nd20 after a delay period of the second delay unit 220 since thefirst enable signal EN1 has been activated at a high level. The secondpulse generator 223 operates to generate a third enable signal EN3 aftera delay period of the third delay unit 222 since a signal of the nodend20 has gone to a high level.

The fourth enable signal generator 23 is organized of a third pulsegenerator 231 including a fourth delay unit 230, a fourth pulsegenerator 233 including a fifth delay unit 232, a fifth pulse generator235 including a sixth delay unit 234, and a sixth pulse generator 237including a seventh delay unit 236. The third pulse generator 231outputs a signal, which is activated at a low level while the secondenable signal EN2 is activated at a low level and in addition for adelay period of the fourth delay unit 230 after the second enable signalEN2 transitions to a high level, to a node nd21. The fourth pulsegenerator 233 outputs a signal, which is enabled at a high level while asignal of the node nd21 is at a low level and in addition for a delayperiod of the fifth delay unit 232 after the signal of the node nd21transitions to a high level, to a node nd22. The fifth pulse generator235 outputs a signal, which is enabled at a high level after a delayperiod of the sixth delay unit 234 since a signal of the node nd22 hasgone to a high level, to a node nd23. The sixth pulse generator 237outputs a fourth enable signal EN4 that is activated at a low levelafter a delay period of the seventh delay unit 236 since a signal of thenode nd23 has gone to a high level.

FIG. 4 shows a timing diagram of the enable signals EN1-EN4 suppliedfrom the enable signal generator 2. The first enable signal EN1 isactivated at a high level at a time t2, after a delay period d1 of thefirst enable signal generator 20 from a time t1 at which the delayedactive signal ACTd is enabled at a high level. The second enable signalEN2 is activated at a low level at a time t3, after a delay period d2 ofthe first delay unit 210 from the time t2 at which the first enablesignal EN1 is activated at a high level. The third enable signal EN3 isactivated at a high level at a time t4, after a delay period d3 of thesecond delay unit 220 and a delay time d4 of the third delay unit 222from the time t2 at which the first enable signal EN1 is activated at ahigh level. The fourth enable signal EN4 is activated at a low level ata time t6, after a delay period d7 of the sixth delay unit 234 and adelay period D8 of the seventh delay unit 236 from the time t3 at whichthe second enable signal EN2 is activated at a low level.

The first internal voltage generator 3, as illustrated in FIG. 5, iscomprised of an initial driver 30, an initial driving terminator 31, acomparison driver 32, and an internal voltage driver 33. The internalvoltage driver 33 is formed of a PMOS transistor connected between anexternal voltage VDD and an output node of the peri-voltage VPERI andturned on in response to a driving signal DRV. The detailedconfigurations of the initial driver 30, the initial driving terminator31, and the comparison driver 32 will be described as follows.

The initial driver 30, referring to FIG. 6, is comprised of a comparisonsignal generator 300 and a driving signal driver 301. The comparisonsignal generator 300 is implemented in a comparator operating inresponse to an input of the active signal ACT that is enabled at a highlevel at the beginning of the active mode. The comparison signalgenerator 300 with such a comparator generates a comparison signal COMof low level when the peri-voltage VPERI is lower than an internalreference voltage VINT. The driving signal driver 301 is formed of abuffer 302, a pulse signal generator 304 including an eighth delay unit303, a NOR gate NR30, and an NMOS transistor N30. The buffer 302 iscomposed of a plurality of inverters for buffering and outputting thecomparison signal COM. The pulse signal generator 304 operates togenerate a pulse signal PUL including a pulse that maintains a low levelduring a delay period of the eighth delay unit 303 from when the firstenable signal EN1 goes to a high level. The NOR gate NR30 operates as atransmission device for inversely buffering and transferring thecomparison signal COM as a pull-down signal PD. The NMOS transistor N30is turned on in response to the pull-down signal PD of high level,pulling down the driving signal DRV to the ground voltage VSS.

The initial driving terminator 31, referring to FIG. 7, is comprised ofa switch signal generator 310, a first voltage divider 311, and a firstcomparator 312. The switch signal generator 310 is formed of an SR latchfor generating a switch signal SW that is enabled at a high level fromwhen the second enable signal EN2 is activated to a low level until whenthe fourth enable signal EN4 is activated to a low level. The firstvoltage divider 311 generates a first divided voltage HALF1 by voltagedivision. Here, the first divided voltage HALF1 may be set to a halflevel (½) of the peri-voltage VPERI. The first comparator 312 is formedof a comparator for raising the driving signal DRV up to the level ofthe external voltage VDD if the first divided voltage HALF1 is higherthan a first reference voltage VREF. The first reference voltage VREFmay be set to 0.9V as an example. Thus, the first comparator 312 of theinitial driving terminator 31 raises the driving signal DRV up to thelevel of the external voltage VDD if the peri-voltage VPERI is over1.8V.

The comparison driver 32, referring to FIG. 8, is comprised of a secondvoltage divider 320 and a second comparator 321. The second voltagedivider 320 divides the peri-voltage VPERI and generates a seconddivided voltage HALF2. The second divided voltage HALF2 may be set to ahalf level (½) of the peri-voltage VPERI. The second comparator 321 isformed of a comparator to pull the driving signal DRV up to the level ofthe external voltage VDD if the second divided voltage HALF2 is higherthan the first reference voltage VREF, or pull the driving signal DRVdown to a low level if the second divided voltage HALF2 is lower thanthe first reference voltage VREF. The comparison driver 32 is enabled tomaintain the peri-voltage VPERI at 1.8V as the target level after apredetermined delay period from activation of the initial driver 30 andthe initial driving terminator 31.

The NMOS transistors included in the initial driver 30 and the initialdriving terminator 31 may be larger in size, providing sufficientcurrent drivability, than those included in the comparison driver 32.This is for the purpose of rapidly raising the peri-voltage VPERI to thetarget level (that is, 1.8V) by the initial driver 30 in sufficientcurrent drivability at the beginning of the active mode, and quicklystopping driving of the peri-voltage VPERI by the initial drivingterminator 31 in sufficient current drivability if the peri-voltageVPERI reaches the target level before the comparison driver 32 operates.

The second internal voltage generator 4, referring to FIG. 9, isimplemented in a comparator driving the peri-voltage VPERI by comparinga third divided voltage HALF3, which is set from the peri-voltage VPERIthrough voltage division, to a second reference voltage VREFS. Thesecond internal voltage generator 4 is driven in response to the activesignal ACT of low level in the standby mode. Here, the third dividedvoltage HALF3 may be generated to a half level (½) of the peri-voltageVPERI and the second reference voltage VREFS may be set to 0.6V. Thesecond internal voltage generator 4 outputs the peri-voltage VPERI atthe target level of 1.2V in the standby mode.

The per-voltage generation circuit having the structure referenced aboveoperates as follows.

In the standby mode, the active signal ACT of low level activates thesecond internal voltage generator 4 to generate the peri-voltage VPERIat the target level of 1.2V. During this period, the enable signalgenerator 2 and the first internal voltage generator 3 are disabled.

Once the active mode begins, the active signal ACT goes to a high level.Responding to the active signal ACT of high level, the enable signalgenerator 2 outputs the first through fourth enable signals EN1-EN4 andthe first internal voltage generator 3 drives the peri-voltage VPERI tothe target level of 1.8V for the active mode. Now an operation of thefirst internal voltage generator 3 will be detailed hereinafter.

First, the first enable signal EN1 activated at a high level makes theinitial driver 30 pull down the driving signal DRV to the ground voltageVSS. In further detail, the comparison signal generator 300 outputs thecomparison signal COM at a low level because the peri-voltage VPERI setto 1.2V in the standby mode is lower than the internal reference voltageVINT. During this period, as the pulse signal generator 304 of thedriving signal driver 301 generates the pulse signal PUL including apulse that maintains a low level during a delay period of the eighthdelay unit 303 from when the first enable signal EN1 goes to a highlevel, the NOR gate NR30 generates the pull-down signal PD at a highlevel. Then, the NMOS transistor N30 is turned on to pull down thedriving signal DRV to the ground voltage VSS. If the driving signal DRVgoes down to the ground voltage VSS, the PMOS transistor of the internalvoltage driver 33 is turned on to drive the peri-voltage VPERI. Sincethe initial driver 30 is comprised of NMOS transistors of large size,the peri-voltage VPERI rapidly rises up to the target level of 1.8V inthe active mode.

Afterward, the second enable signal EN2 activated at a low level makesthe initial driving terminator 31 operate. In further detail, the secondenable signal EN2 of low level activates the switch signal SW at a highlevel to drive the first comparator 312. The first comparator 312 pullsthe drive voltage DRV up to the level of the external voltage VDD if theperi-voltage VPERI reaches the target level of 1.8V in the active mode.Thus, the PMOS transistor of the internal voltage driver 33 is turnedoff to stop driving the peri-voltage VPERI. As the initial drivingterminator 31 is formed of large-sized MOS transistors, it is possibleto quickly stop driving the peri-voltage VPERI if the peri-voltage VPERIreaches the target level of 1.8V in the active mode.

Next, the third enable signal EN3 activated at a high level makes thecomparison driver 32 operate to maintain the peri-voltage VPERI at thetarget level of 1.8V in the active mode. In further detail, the secondvoltage divider 320 generates the second divided voltage HALF2 bydividing the peri-voltage VPERI and the second comparator 321 adjusts avoltage level of the driving signal DRV, in response to the third enablesignal EN3 of high level, so as to maintain the peri-voltage VPERI atthe target level of 1.8V in the active mode. During this period, thefourth enable signal EN4 is activated at a low level to disable theinitial driving terminator 31.

The peri-voltage generation circuit according to the present inventionoffers high current drivability capable of rapidly pulling up theperi-voltage VPERI to the target level of 1.8V by driving the drivingsignal DRV down to the ground voltage VSS through the initial driver 30when the operation mode changes from the standby mode to the activemode. Moreover, once the peri-voltage VPERI arrives at the target levelof 1.8V in the active mode, the initial driving terminator 31 stopsdriving the peri-voltage VPERI by raising the driving signal DRV to thelevel of the external voltage VDD and the comparison driver 32 maintainsthe peri-voltage VPERI at the target level of 1.8V. As such, theperi-voltage generation circuit according to the present invention iseffective in reducing leakage current and power dissipation since theperi-voltage VPERI can rapidly rise up to the target level of 1.8V whenthe active mode begins from the standby mode.

While the present invention has been described with respect to thespecific embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

The present application claims priority to Korean application number10-2009-0026045, filed on Mar. 26, 2009, which is incorporated byreference in its entirety.

1-25. (canceled)
 26. An internal voltage generation circuit, comprising:a first enable signal generator configured to delay an active signal fora predetermined delay time and to generate a first enable signal; acomparison signal generator configured to compare the internal voltagewith an internal reference voltage, in response to an active signal, andto generate a comparison signal; a pulse signal generator configured toreceive the first enable signal and to generate a pulse signal; atransmission device configured to buffer and transfer the comparisonsignal as a pull-down signal in response to the pulse signal; and adrive device configured to drive the driving signal to the first levelin response to the pull-down signal.
 27. The internal voltage generationcircuit of claim 26, wherein a pulse of the pulse signal is generated ina period in which the first enable signal is activated.
 28. The internalvoltage generation circuit of claim 26, wherein the drive device is aMOS transistor connected between the driving signal and a ground signaland turned on in response to the pull-down signal.
 29. The internalvoltage generation circuit of claim 26, which further comprises: aninitial driving terminator configured to drive the driving signal to asecond level if the internal voltage is higher than the target level.30. The internal voltage generation circuit of claim 26, which furthercomprises: a second enable signal generator configured to generate asecond enable signal that is activated after a first predeterminedperiod since a time the first enable signal is activated; and a thirdenable signal generator configured to generate a third enable signalthat is activated after a second predetermined period since a time thesecond enable signal is activated.
 31. The internal voltage generationcircuit of claim 30, wherein the initial driving terminator comprises: aswitch signal generator configured to generate a switch signal inresponse to the second enable signal and fourth enable signal; a voltagedivider configured to divide the internal voltage and to generate adivided voltage; and a comparator configured to compare the dividedvoltage with a reference voltage and to drive the driving signal to thesecond level.
 32. The internal voltage generation circuit of claim 31,wherein the switch signal is enabled if the second enable signal isactivated, and is disabled if the fourth enable signal is activated. 33.The internal voltage generation circuit of claim 32, wherein the fourthenable signal is activated after a third predetermined period since thesecond enable signal is activated.
 34. The internal voltage generationcircuit of claim 31, wherein if the internal voltage is equal to thereference voltage in level, the comparator drives the driving signal tothe second level set to the external voltage.
 35. The internal voltagegeneration circuit of claim 30, which further comprises: a comparisondriver configured to drive the driving signal to maintain the internalvoltage at a target level in response to the third enable signal. 36.The internal voltage generation circuit of claim 35, wherein thecomparison driver comprises: a voltage divider configured to divide theinternal voltage and to generate a divided voltage; and a comparatorconfigured to compare the divided voltage with a reference voltage, inresponse to the third enable signal, and to drive the driving signal.